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AO4606

Features: n-channel p-channelVDS (V) -30V -30VID = 6.9A -6ARDS(ON) RDS(ON)< 28m (VGS=10V) < 35m (VGS = 10V)< 42m (VGS=4.5V) < 58m (VGS = 4.5V)Specifications Paramete Symbol Max n-channel Max p-channel Units Drain-Source Voltage VDS 30 -30...

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SeekIC No. : 004285794 Detail

AO4606: Features: n-channel p-channelVDS (V) -30V -30VID = 6.9A -6ARDS(ON) RDS(ON)< 28m (VGS=10V) < 35m (VGS = 10V)< 42m (VGS=4.5V) < 58m (VGS = 4.5V)Specificati...

AO4606 Data Sheet

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Part Number:
AO4606
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

n-channel p-channel
VDS (V) -30V -30V
ID = 6.9A -6A
RDS(ON) RDS(ON)
< 28m (VGS=10V) < 35m (VGS = 10V)
< 42m (VGS=4.5V) < 58m (VGS = 4.5V)




Specifications

Paramete Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain Current A TA=25°C ID 6.9 -6 A
TA=70°C 5.8 -5
Pulsed Drain Current B IDM 30 -30
Power Dissipation A TA=25°C PD 2 2 W
TA=70°C 1.44 1.44
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C





Description

The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.




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