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AO4609

Features: n-channel p-channelVDS (V) -30V -30VID = 8.5A -3ARDS(ON) RDS(ON)< 18m (VGS=10V) < 130m (VGS = 10V)< 28m (VGS=4.5V) < 180m (VGS = 4.5V) < 260m (VGS = 2.5VSpecifications Paramete Symbol Ma...

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SeekIC No. : 004285796 Detail

AO4609: Features: n-channel p-channelVDS (V) -30V -30VID = 8.5A -3ARDS(ON) RDS(ON)< 18m (VGS=10V) < 130m (VGS = 10V)< 28m (VGS=4.5V) &...

AO4609 Data Sheet

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Part Number:
AO4609
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

n-channel p-channel
VDS (V) -30V -30V
ID = 8.5A -3A
RDS(ON) RDS(ON)
< 18m (VGS=10V) < 130m (VGS = 10V)
< 28m (VGS=4.5V) < 180m (VGS = 4.5V)
< 260m (VGS = 2.5V




Specifications

Paramete Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain Current A TA=25°C ID 8.5 -3 A
TA=70°C 6.6 -2.4
Pulsed Drain Current B IDM 40 -6
Power Dissipation A TA=25°C PD 2 2 W
TA=70°C 1.28 1.28
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C





Description

The AO4609 uses advanced trenchtechnology MOSFETs to provide excellent RDS(ON) and low gate char


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