AO4701

MOSFET P-CH -30V -5A 8-SOIC

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SeekIC No. : 003431166 Detail

AO4701: MOSFET P-CH -30V -5A 8-SOIC

floor Price/Ceiling Price

Part Number:
AO4701
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET P-Channel, Metal Oxide Gain : 11.5 dB at 500 MHz
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Diode (Isolated) Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 5A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 49 mOhm @ 5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) @ Vgs: 9.5nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 952pF @ 15V
Power - Max: 2W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 5A
Package / Case: 8-SOIC (0.154", 3.90mm Width)
FET Feature: Diode (Isolated)
Power - Max: 2W
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Gate Charge (Qg) @ Vgs: 9.5nC @ 4.5V
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 49 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds: 952pF @ 15V


Features:

VDS (V) = -30V
ID = -5A
RDS(ON) < 49m (VGS = 10V)
RDS(ON) < 64m (VGS = 4.5V)
RDS(ON) < 120m (VGS = 2.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF=0.5V@1A





Specifications

Parameter Symbol MOSFET Schottky Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current A TA=25°C ID -5 A
TA=70°C -4.2
Pulsed Drain Current BSchottky reverse voltage B IDM -30
Schottky reverse voltage VKA 30 V
Continuous Forward Current A TA=25°C IF 4.4 A
TA=70°C 3.2
Pulsed Forward Current B IFM 30
Power Dissipation TA=25°C PD 2 2 w
TA=70°C 1.44 1.44
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C






Description

The AO4701 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch.




Parameters:

Technical/Catalog InformationAO4701
VendorAlpha & Omega Semiconductor Inc
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C5A
Rds On (Max) @ Id, Vgs49 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds 952pF @ 15V
Power - Max2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs9.5nC @ 4.5V
Package / Case8-SOIC
FET FeatureDiode (Isolated)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AO4701
AO4701
785 1047 2 ND
78510472ND
785-1047-2



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