AO4824

Features:

Q1 Q2
V_DS (V) = 30V V_DS(V) = 30V
I_D = 8.5A I_D=9.8A (V_GS = 10V)
R_DS(ON) < 17m <13m (V_GS = 10V)
R_DS(ON) < 27m <15m (V_GS = 4.5




Specifications

Paramete		Symbol	MaximumQ1	Max Q2	Units
Drain-Source Voltage		VDS	30	30	V
Gate-Source Voltage		VGS	±20	±12	V
Continuous Drain Current A	TA=25°C	ID	8.5	9.8	A
	TA=70°C		6.8	7.8
Pulsed Drain Current B		IDM	30	40
Power Dissipation A	TA=25°C	PD	2	2	W
	TA=70°C		1.28	1.28
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150	-55 to 150	°C

Description

The AO4824 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. Standard Product AO4824 is Pb-free (meets ROHS & Sony 259 specifications). AO4824L is a Green Product ordering option. AO4824 and AO4824L are electrically identical.