MOSFET 2N-CH 30V 10A 8SOIC
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Series: | - | Manufacturer: | Alpha & Omega Semiconductor Inc |
FET Type: | 2 N-Channel (Dual) | FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V | Drain Source Voltage VDS : | + / - 20 V |
Current - Continuous Drain (Id) @ 25° C: | 10A | Rds On (Max) @ Id, Vgs: | 13 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA | Gate Charge (Qg) @ Vgs: | 17nC @ 15V |
Input Capacitance (Ciss) @ Vds: | 910pF @ 15V | Power - Max: | 2W |
Mounting Type: | Surface Mount | Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Parameter |
Symbol |
Maximum |
Units | |
Drain-Source Voltage Gate-Source Voltage |
VDS VGS |
30 ±12 |
V V | |
Continuous Drain Current A |
TA=25°C TA=70°C |
ID |
8 6 |
A |
Pulsed Drain CurrentB |
IDM |
30 | ||
Power Dissipation A |
TA=25°C TA=70°C |
PD |
1.5 1 |
W |
Junction and Storage Temperature Range |
TJ, TSTG |
-55 to 150 |
°C |
The AO4832 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4832 is Pb-free (meets ROHS & Sony 259 specifications). AO4832L is a Green Product ordering option. AO4832 and AO4832L are electrically identical.