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MFG:AO  Package Cooled:SOP8  D/C:08+  

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Part Number: AO4900A

 

MFG: AO

Package Cooled: SOP8

D/C: 08+

Description: The AO4900A uses advanced trench technology to provide excellent R DS(ON) and low gate char...


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AO4900A General Description


The AO4900A uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4900A is Pbfree (meets ROHS & Sony 259 specifications). AO4900AL is a Green Product ordering option. AO4900A and AO4900AL are electrically identical.

AO4900A Maximum Ratings

Parameter
Symbol
MOSFET
Schottky
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
±12
 
V
V
Continuous Drain Current A TA=25°C
TA=70°C
ID
6.9
5.8
 
A
Pulsed Drain Current B
IDM
40
 
Schottky reverse voltage
VKA
30
V
Continuous Forward Current A
TA=25°C
TA=70°C

IF
3
2
A

Pulsed Forward Current B

IFM

40
Power Dissipation TA=25°C
TA=70°C
PD
2
1.44
2
1.44
W
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
-55 to 150
°C

AO4900A Features

·VDS (V) = 30V
·ID = 6.9A (VGS = 10V)
·RDS(ON) < 27mΩ (VGS = 10V)
·RDS(ON) < 32mΩ (VGS = 4.5V)
·RDS(ON) < 50mΩ (VGS = 2.5V)

AO4900A Connection Diagram

AO4900A  Connection Diagram

AO4900A datasheet

AO4900A
PDF/DataSheet Download

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