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MFG:AO Package Cooled:SOP8 D/C:08+


Part Number: AO4900A
MFG: AO
Package Cooled: SOP8
D/C: 08+
Description: The AO4900A uses advanced trench technology to provide excellent R DS(ON) and low gate char...
MFG:AO Package Cooled:SOP8 D/C:08+


MFG: AO
Package Cooled: SOP8
D/C: 08+
Description: The AO4900A uses advanced trench technology to provide excellent R DS(ON) and low gate char...
The AO4900A uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4900A is Pbfree (meets ROHS & Sony 259 specifications). AO4900AL is a Green Product ordering option. AO4900A and AO4900AL are electrically identical.
|
Parameter |
Symbol |
MOSFET |
Schottky |
Units | |
| Drain-Source Voltage Gate-Source Voltage |
VDS VGS |
30 ±12 |
V V | ||
| Continuous Drain Current A | TA=25°C TA=70°C |
ID |
6.9 5.8 |
A | |
| Pulsed Drain Current B |
IDM |
40 |
|||
| Schottky reverse voltage |
VKA |
30 |
V | ||
| Continuous Forward Current A |
TA=25°C TA=70°C |
IF |
3 2 |
A | |
|
Pulsed Forward Current B |
IFM |
40 | |||
| Power Dissipation | TA=25°C TA=70°C |
PD |
2 1.44 |
2 1.44 |
W |
| Junction and Storage Temperature Range |
TJ, TSTG |
-55 to 150 |
-55 to 150 |
°C | |
AO4900A
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