Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Package / Case: SC-89, SOT-490
Supplier Device Package: SC-89-3
Current - Continuous Drain (Id) @ 25° C: 500mA
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power - Max: 280mW
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: -
Input Capacitance (Ciss) @ Vds: 100pF @ 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 800 mOhm @ 500mA, 4.5V
Features: VDS (V) = -20V
ID = -0.5 A (VGS = -4.5V)
RDS(ON) < 0.8 (VGS = -4.5V)
RDS(ON) < 1 (VGS = -2.5V)
RDS(ON) < 1.3 (VGS = -1.8V)Specifications
| Parameter |
Symbol |
10 secs |
Steady State |
Unit |
| Drain-Source Voltage |
VDS |
-20 |
V |
| Gate-Source Voltage |
VGS |
±8 |
Continuous Drain
Current AF |
TA = 25 |
ID |
-0.5 |
-0.5 |
A |
| TA = 70 |
-0.45 |
-0.40 |
| Pulsed Drain Current B |
IDM |
-1 |
| Power Dissipation A |
TA = 25 |
PD |
0.38 |
0.28 |
W |
| TA = 70 |
0.24 |
0.18 |
| Junction and Storage Temperature Range |
TJ, Tstg |
-55 to 150 |
|
DescriptionThe AO5401E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM pplications.AO5401E and AO5401EL are electrically identical.
-RoHS compliant
-AO5401EL is Halogen Free
AO5401E Data Sheet
