AO6408

MOSFET N-CH 20V 8.8A 6-TSOP

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AO6408 Picture
SeekIC No. : 003433932 Detail

AO6408: MOSFET N-CH 20V 8.8A 6-TSOP

floor Price/Ceiling Price

Part Number:
AO6408
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 11.5 dB at 500 MHz Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 8.8A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.8A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 22nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2200pF @ 10V
Power - Max: 2W Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 2W
Current - Continuous Drain (Id) @ 25° C: 8.8A
Gate Charge (Qg) @ Vgs: 22nC @ 4.5V
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Input Capacitance (Ciss) @ Vds: 2200pF @ 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.8A, 10V


Features:

`V DS (V) = 20V
`ID = 8.8A (VGS = 10V)
`R DS(ON) < 18m (VGS = 10V)
`R DS(ON) < 20m (VGS = 4.5V)
`R DS(ON) < 25m (VGS = 2.5V)
`R DS(ON) < 32m (VGS = 1.8V)
`ESD Rating: 2000V HBM





Pinout

  Connection Diagram




Specifications

Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain
Current A
TA=25°C
ID
8.8
A
TA=70°C
7
A
Pulsed Drain Current B
IDM
40
A
Power Dissipation TA=25°C
PD
2
W
TA=70°C
1.28
W
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C





Description

The AO6408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a load switch. Standard product AO6408 is Pbfree (meets ROHS & Sony 259 specifications). AO6408L is a Green Product ordering option. AO6408 and AO6408L are electrically identical.






Parameters:

Technical/Catalog InformationAO6408
VendorAlpha & Omega Semiconductor Inc
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C8.8A
Rds On (Max) @ Id, Vgs18 mOhm @ 8.8A, 10V
Input Capacitance (Ciss) @ Vds 2200pF @ 10V
Power - Max2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs22nC @ 4.5V
Package / Case6-TSOP
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AO6408
AO6408
785 1073 2 ND
78510732ND
785-1073-2



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