AO6414

MOSFET N-CH 55V 2.3A 6-TSOP

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AO6414 Picture
SeekIC No. : 003430911 Detail

AO6414: MOSFET N-CH 55V 2.3A 6-TSOP

floor Price/Ceiling Price

Part Number:
AO6414
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/15

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 11.5 dB at 500 MHz Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 2.3A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.4A, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) @ Vgs: 3.3nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 300pF @ 25V
Power - Max: 1.56W Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Current - Continuous Drain (Id) @ 25° C: 2.3A
Vgs(th) (Max) @ Id: 2V @ 250µA
Input Capacitance (Ciss) @ Vds: 300pF @ 25V
Power - Max: 1.56W
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 55V
Gate Charge (Qg) @ Vgs: 3.3nC @ 4.5V
Package / Case: SC-74, SOT-457
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.4A, 4.5V


Features:

`V DS (V) = 55V
`ID = 2.4A (VGS = 4.5V)
`R DS(ON) < 160m (VGS = 4.5V)
`R DS(ON) < 200m (VGS = 2.5V)





Pinout

  Connection Diagram




Specifications

Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
55
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain
Current A
TA=25°C
ID
2.3
A
TA=70°C
1.9
A
Pulsed Drain Current B
IDM
9
A
Power Dissipation TA=25°C
PD
1.56
W
TA=70°C
1.1
W
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C





Description

The AO6414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch. Standard product AO6414 is Pb-free (meets ROHS & Sony 259 specifications). AO6414L is a Green Product ordering option. AO6414 and AO6414L are electrically identical.






Parameters:

Technical/Catalog InformationAO6414
VendorAlpha & Omega Semiconductor Inc
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C2.3A
Rds On (Max) @ Id, Vgs160 mOhm @ 2.4A, 4.5V
Input Capacitance (Ciss) @ Vds 300pF @ 25V
Power - Max1.56W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs3.3nC @ 4.5V
Package / Case6-TSOP
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AO6414
AO6414
785 1075 2 ND
78510752ND
785-1075-2



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