AO6415

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 6-TSOP
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power - Max: 1.25W
Current - Continuous Drain (Id) @ 25° C: 3.3A
Gate Charge (Qg) @ Vgs: 6nC @ 4.5V
Package / Case: SC-74, SOT-457
Manufacturer: Alpha & Omega Semiconductor Inc
Input Capacitance (Ciss) @ Vds: 620pF @ 10V
Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.3A, 10V


Features:

`V <sub>DS (V)</sub> = -20V
`I_D = -3.3A (V_GS = -10V)
`R <sub>DS(ON)</sub> < 75m (V<sub>GS</sub> = -10V)
`R _DS(ON) < 100m (V_GS = -4.5V)
`R <sub>DS(ON)</sub> < 150m (V<sub>GS</sub> = -2.5V)
`ESD Rating: 2000V HBM




Pinout






Specifications

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		VDS	-20	V
Gate-Source Voltage		VGS	±12	V
Continuous Drain Current A	TA=25°C	ID	-3.3	A
	TA=70°C		-2.7	A
Pulsed Drain Current B		IDM	-14	A
Power Dissipation A	TA=25°C	PD	1.25	W
	TA=70°C		0.8	W
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150	°C

Description

The AO6415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO6415 is Pb-free (meets ROHS & Sony 259 specifications). AO6415L is a Green Product ordering option. AO6415 and AO6415L are electrically identical.