AO7401

MOSFET P-CH -30V -1.2A SC70-3

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AO7401 Picture
SeekIC No. : 003430862 Detail

AO7401: MOSFET P-CH -30V -1.2A SC70-3

floor Price/Ceiling Price

US $ .09~.32 / Piece | Get Latest Price
Part Number:
AO7401
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $.32
  • $.21
  • $.18
  • $.15
  • $.12
  • $.09
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET P-Channel, Metal Oxide Gain : 15.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 1.2A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.2A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) @ Vgs: 5.06nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 409pF @ 15V
Power - Max: 350mW Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: SC-70, SOT-323
Power - Max: 350mW
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 1.2A
Supplier Device Package: SOT-323
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.2A, 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Gate Charge (Qg) @ Vgs: 5.06nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 409pF @ 15V


Features:

VDS (V) = -30V
ID = -1.2A
RDS(ON) < 150m (VGS = -10V)
RDS(ON) < 200m (VGS = -4.5V)
RDS(ON) < 280m (VGS = -2.5V)





Specifications

Paramete Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current A TA=25°C ID -1.2 A
TA=70°C -1.0
Pulsed Drain Current B IDM -10
Power Dissipation A TA=25°C PD 0.35 W
TA=70°C 0.22
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C






Description

The AO7401 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters.




Parameters:

Technical/Catalog InformationAO7401
VendorAlpha & Omega Semiconductor Inc
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C1.2A
Rds On (Max) @ Id, Vgs150 mOhm @ 1.2A, 10V
Input Capacitance (Ciss) @ Vds 409pF @ 15V
Power - Max350mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs5.06nC @ 4.5V
Package / CaseSC-70
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AO7401
AO7401
785 1085 2 ND
78510852ND
785-1085-2



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