AOB418

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Digi-Reel®Alternate Packaging
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Current - Continuous Drain (Id) @ 25° C: 105A
Power - Max: 333W
Gate Charge (Qg) @ Vgs: 83nC @ 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Series: SDMOS™
Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Input Capacitance (Ciss) @ Vds: 5200pF @ 50V


Features:

`V<sub>DS</sub> (V) = 30V
`I_D = 110A (V_GS = 10V)
`R<sub>DS(ON)</sub> < 6m (V<sub>GS</sub> = 10V)
`R_DS(ON) < 7.2m (V_GS = 4.5V)


Pinout




Specifications

Parameter		Symbol	MOSFET	Units
Drain-Source Voltage		VDS	30	V
Gate-Source Voltage		VGS	±20	V
Continuous Drain Current B G	TA=25°C G	ID	110	A
	TA=100°CB		68
Pulsed Drain Current		IDM	200
Avalanche Current C		IAR	40	A
Repetitive avalanche energy L=0.1mH C		EAR	220	mJ
Power Dissipation B	TA=25°C	PD	100	W
	TA=100°C		50
Power Dissipation A	TA=25°C	PDSM	2.5	W
	TA=70°C		1.6
Junction and Storage Temperature Range		TJ, TSTG	-55 to 175	°C

Description

The AOB418 uses advanced trench technology to provide excellent R_DS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOB418 is Pb-free (meets ROHS & Sony 259 specifications). AOB418L is a Green Product ordering option. AOv and AOB418L are electrically identical.