AOB4184

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.5W
Current - Continuous Drain (Id) @ 25° C: 12A
Gate Charge (Qg) @ Vgs: 35nC @ 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263
Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Input Capacitance (Ciss) @ Vds: 1800pF @ 20V


Features:

V_DS (V) =40V
I_D = 30 A (V_GS = 10V)
R _DS(ON) < 10.5 m (V_GS = 10V)
R _DS(ON) < 13 m (V_GS = 4.5V)




Specifications

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		VDS	40	V
Gate-Source Voltage		VGS	±20	V
Continuous Drain Current G	TC=25	ID	30	A
	TC=100		24
Pulsed Drain Current C		IDM	120
Continuous Drain Current A	TC=25	IDSM	12
	TC=70		10
Avalanche Current C		IAR	35	A
Repetitive avalanche energy L=100uH C		EAR	61	mJ
Power Dissipation B	TC=25	PD	50	W
	TC=100		25
Power Dissipation A	TC=25	PDSM	2.5	W
	TC=70		1.6
Junction and Storage Temperature Range		TJ,TSTG	-55 to 175

Description

The AOB4184/L uses advanced trench technology and design to provide excellent R _DS(ON) with low gate charge. With the excellent thermal resistance of the D²PAK package, this device is well suited for high current load applications. AOB4184 and AOB4184L are electrically identical.
-RoHS Compliant
-AOB4184L is Halogen Free