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AOD11S60

MOSFET N-CH 600V 11A DPAK

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SeekIC No. : 003430915 Detail

AOD11S60: MOSFET N-CH 600V 11A DPAK

AOD11S60 Data Sheet

floor Price/Ceiling Price

US $ .58~1.26 / Piece | Get Latest Price
Part Number:
AOD11S60
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $1.26
  • $.97
  • $.88
  • $.79
  • $.68
  • $.58
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: aMOS™ Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 600V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 11A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 399 mOhm @ 3.8A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4.1V @ 250µA Gate Charge (Qg) @ Vgs: 11nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 545pF @ 100V
Power - Max: 208W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak)    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 11nC @ 10V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25° C: 11A
Power - Max: 208W
Input Capacitance (Ciss) @ Vds: 545pF @ 100V
Manufacturer: Alpha & Omega Semiconductor Inc
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Series: aMOS™
Rds On (Max) @ Id, Vgs: 399 mOhm @ 3.8A, 10V


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