AOD2N60

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 11nC @ 10V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25° C: 2A
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Input Capacitance (Ciss) @ Vds: 325pF @ 25V
Manufacturer: Alpha & Omega Semiconductor Inc
Power - Max: 56.8W
Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V


Description

The AOD2N60 has the following features including VDS (V) = 700V @ 150°C;ID = 2A;RDS(ON) < 4.4 (VGS = 10V).
The AOD2N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.The value of R JA is measured with the device in a still air environment with T A =25°C.The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient.The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. L=60mH, IAS=2A, VDD=50V, RG=10, Starting TJ=25°C.
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