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Part Number: AOD3N50

 

 

 

 

Description: The AOD3N50 has been fabricated using an advanced high voltage MOSFET process that is designed to deli...


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AOD3N50 General Description


The AOD3N50 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

AOD3N50 Maximum Ratings

Parameter
Symbol
Maximium
Units
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
±30
V
Continuous Drain Current B TC=25
ID
2.8
A
TC=100
1.8
Pulsed Drain Current C
IDM
9.0
Avalanche Current C
lAR
2.0
A
Repetitive avalanche energy C
EAR
60
mJ
Single pulse avalanche energy H
EAS
120
mJ
Peak diode recovery dv/dt
dv/dt
5
V/ns
Power Dissipation TC=25
PD
57
W
Derate above 2
0.45
W/
Junction and Storage Temperature Range
TJ, TSTG
-50 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
300
Thermal Characteristics
Parameter
Symbol
Typical
Maximum
Units
Maximum Junction-to-Ambient A,G
RJA
45
55
/W
Maximum Case-to-Sink A
RCS
-
0.5
/W
Maximum Junction-to-Case D,F
RJC
1.8
2.2
/W


AOD3N50 Features

VDS (V) = 600V @ 150
ID = 2.8A
RDS(ON) < 3Ω (VGS = 10V)

AOD3N50 datasheet

AOD400
PDF/DataSheet Download

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