AOD3N50

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 8nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 2.8A
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Drain to Source Voltage (Vdss): 500V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
Power - Max: 57W
Manufacturer: Alpha & Omega Semiconductor Inc
Input Capacitance (Ciss) @ Vds: 331pF @ 25V


Features:

V_{DS (V)} = 600V @ 150
I_D = 2.8A
R_DS(ON) < 3Ω (V_GS = 10V)




Specifications

Parameter		Symbol	Maximium		Units
Drain-Source Voltage		VDS	500		V
Gate-Source Voltage		VGS	±30		V
Continuous Drain Current B	TC=25	ID	2.8		A
	TC=100		1.8
Pulsed Drain Current C		IDM	9.0
Avalanche Current C		lAR	2.0		A
Repetitive avalanche energy C		EAR	60		mJ
Single pulse avalanche energy H		EAS	120		mJ
Peak diode recovery dv/dt		dv/dt	5		V/ns
Power Dissipation	TC=25	PD	57		W
	Derate above 2		0.45		W/
Junction and Storage Temperature Range		TJ, TSTG	-50 to 150
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds		TL	300
Thermal Characteristics
Parameter		Symbol	Typical	Maximum	Units
Maximum Junction-to-Ambient A,G		RJA	45	55	/W
Maximum Case-to-Sink A		RCS	-	0.5	/W
Maximum Junction-to-Case D,F		RJC	1.8	2.2	/W

Description

The AOD3N50 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.