AOD434

Features:

V_DS (V) = 20V
I_D = 18A (V_GS  = 10V)
R_DS(ON) < 14m (V_GS  = 10V)
R_DS(ON)  < 16m (V_GS  = 4.5V)
R_DS(ON)  < 21m (V_GS = 2.5V)
R_DS(ON) < 30m (V_GS = 1.8V)
ESD Rating: 2KV HBM


Specifications

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		VDS	20	V
Gate-Source Voltage		VGS	±12	V
Continuous Drain CurrentB,G	TC=25°C	ID	18	A
	TC=100°C		18
Pulsed Drain CurrentC		IDM	30
Avalanche Current C		IAR	18	A
Repetitive avalanche energy L=0.1mH C		EAR	37	mJ
Power Dissipation B	TC=25°C	PD	60	W
	TC=100°C		30
Power Dissipation A	TA=25°C	PDSM	2.5	W
	TA=70°C		1.6
Junction and Storage Temperature Range		TJ, TSTG	-55 to 175	°C

Description

The AOD434 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected to a 2KV HBM rating. Standard Product AOD434 is Pbfree (meets ROHS & Sony 259 specifications). AOD434L is a Green Product ordering option. AOD434 and AOD434L are electrically identical.