AON3408

Features:

V_DS (V) = 30V
I_D = 8.8A (V_GS = 10V)
R_DS(ON) < 24mΩ (V_GS= 10V)
R_DS(ON) < 29mΩ (V_GS = 4.5V)
R_DS(ON) < 45mΩ (V_GS = 2.5V)




Specifications

Parameter		Symbol	Maximum	Units
Gate-Source Voltage		VDS	30	V
Drain-Source Voltage		VGS	±12	V
Continuous Drain	TA=25	IDSM	8.5	A
Current A	TA=70		7.2
Pulsed Drain Current		IDM	40	A
Power Dissipation	TA=25	PDSM	3.0	W
	TA=70		1.9
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150

Description

The AON3408 uses advanced trench technology to provide excellent R_DS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AON3408 is Pb-free (meets ROHS & Sony 259 specifications).