PinoutSpecifications Parameter Symbol Maximum Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current G TC=25 ID -85 A TC=100 -67 Pulsed Drain CurrentC IDM -280 Continuous Drain Current TC=...
AON6403L: PinoutSpecifications Parameter Symbol Maximum Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current G TC=25 ID ...
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|
Parameter |
Symbol |
Maximum |
Units | |
| Drain-Source Voltage |
VDS |
-30 |
V | |
| Gate-Source Voltage |
VGS |
±20 |
V | |
| Continuous Drain Current G | TC=25 |
ID |
-85 |
A |
| TC=100 |
-67 | |||
| Pulsed Drain CurrentC |
IDM |
-280 | ||
| Continuous Drain Current |
TC=25 |
IDSM |
-21 | |
| TC=70 |
-17 | |||
| Power DissipationB | TC=25 |
PD |
83 |
W |
| TC=100 |
33 | |||
| Power DissipationA | TC=25 |
PDSM |
2.3 | |
| TC=70 |
1.4 | |||
| Avalanche CurrentC |
IAR |
-72 |
A | |
| Repetitive avalanche energy L=0.1mHC |
EAR |
259 |
mJ | |
| Junction and Storage Temperature Range |
TJ,TSTG |
-55 to 150 |
||
The AON6403L combines advanced trench MOSFETtechnology with a low resistance package to provide extremely low RDS(ON).This device is ideal for load switch and battery protection applications.