Features: VDS (V) = 30VID = 24ARDS(ON) < 5.5mW (VGS = 10V)RDS(ON) < 7.5mW (VGS = 10V)VDS (V) = 30V (VGS = 4.5V)PinoutSpecifications Parameter Symbol Max n-channel Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous DrainCurrent G TC=25 ID 24...
AON6426L: Features: VDS (V) = 30VID = 24ARDS(ON) < 5.5mW (VGS = 10V)RDS(ON) < 7.5mW (VGS = 10V)VDS (V) = 30V (VGS = 4.5V)PinoutSpecifications Parameter Symbol Max n-channel Units Drain-Source...
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VDS (V) = 30V
ID = 24A
RDS(ON) < 5.5mW (VGS = 10V)
RDS(ON) < 7.5mW (VGS = 10V)
VDS (V) = 30V (VGS = 4.5V)

| Parameter | Symbol | Max n-channel | Units | |
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current G |
TC=25 | ID | 24 |
A |
| TC=100 | 19 | |||
| Pulsed Drain Current | TA=25 | IDMS | 30 | |
| TA=70 | ||||
| Power Dissipation B | TC=25 | PD | 42 | W |
| TC=100 | 17 | |||
| Pulsed Drain Current C | IDM | 130 | A | |
| Avalanche Current C | IAR | 42 | A | |
| Repetitive avalanche energy 0.1mH C | EAR | 88 | mJ | |
| Power Dissipation A | TA=25 | PDSM | 2 | W |
| TA=70 | 1.2 | |||
| Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | ||
The AON6426L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.