AON7401

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 3.1W
Current - Continuous Drain (Id) @ 25° C: 35A
Gate Charge (Qg) @ Vgs: 39nC @ 10V
Package / Case: 8-VDFN Exposed Pad
Rds On (Max) @ Id, Vgs: 14 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds: 2600pF @ 15V
Manufacturer: Alpha & Omega Semiconductor Inc
Supplier Device Package: 8-DFN-EP (3x3)


Features:

`V<sub>DS</sub> (V) = -30V
`I_D= -9A (V_GS= -10V)
`R<sub>DS(ON)</sub> < 14m (V<sub>GS</sub>= -10V)
`R_DS(ON) < 36m (V_GS= -4.5V)





Pinout






Specifications

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		VDS	-30	V
Gate-Source Voltage		VGS	±25	V
Continuous Drain Current B,G	TC=25	ID	-20	A
	TC=100		-20
Pulsed Drain CurrentC		IDM	-80
Continuous Drain Current	TC=25	IDSM	-9
	TC=70		-7
Power DissipationB	TC=25	PD	27	W
	TC=100		11
Power DissipationA	TC=25	PDSM	1.6
	TC=70		1
Junction and Storage Temperature Range		TJ,TSTG	-55 to 150

Description

The AON7401/L uses advanced trench technology to provide excellent _RDS(ON) , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. AON7401 and AON7401L are electrically identical.
-RoHS Compliant
-AON7401L is Halogen Free