AON7406

MOSFET N-CH 30V 20A 8-DFN

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AON7406 Picture
SeekIC No. : 003431164 Detail

AON7406: MOSFET N-CH 30V 20A 8-DFN

floor Price/Ceiling Price

Part Number:
AON7406
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2019/9/20

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 11.5 dB at 500 MHz Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 25A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 17 mOhm @ 9A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) @ Vgs: 18nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1200pF @ 15V
Power - Max: 27W Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead Exposed Pad Supplier Device Package: 8-DFN-EP (3x3)    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Gate Charge (Qg) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 25A
Packaging: Cut Tape (CT)
Power - Max: 27W
Rds On (Max) @ Id, Vgs: 17 mOhm @ 9A, 10V
Package / Case: 8-SMD, Flat Lead Exposed Pad
Manufacturer: Alpha & Omega Semiconductor Inc
Input Capacitance (Ciss) @ Vds: 1200pF @ 15V
Supplier Device Package: 8-DFN-EP (3x3)


Features:

`VDS (V) = 30V
`ID = 11A (VGS = 10V)
`RDS(ON) < 15m (VGS = 10V)
`RDS(ON) < 23.5m (VGS = 4.5V)





Specifications

Parameter Symbol
Maximum
Units
Drain-Source Voltage VDS
30
V
Gate-Source Voltage VGS
±20
V
Continuous Drain
Current B,H
TC=25 ID
20
A
TC=100
20
Pulsed Drain Current C IDM
50
Continuous Drain
Current G
TA=25 IDSM
11
TA=70
8.8
Power Dissipation B TC=25 PD
27
W
TC=100
11
Power Dissipation A TA=25 PDSM
3.1
TA=70
2
Junction and Storage Temperature Range TJ, TSTG
-55 to 150





Description

The AON7406 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in SMPS and general purpose applications. Standard Product AON7406 is Pb-free (meets ROHS & Sony 259 specifications).






Parameters:

Technical/Catalog InformationAON7406
VendorAlpha & Omega Semiconductor Inc
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs15 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds 1200pF @ 15V
Power - Max27W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs24nC @ 10V
Package / Case8-DFN
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AON7406
AON7406
785 1137 2 ND
78511372ND
785-1137-2



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