AON7422

      The AON7422(N-Channel Enhancement Mode, Field Effect Transistor) uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ideal for load switch and battery protection applications.VDS=30V, ID  (at VGS=10V) =32A, RDS(ON) (at VGS=10V) < 4.6mΩ, RDS(ON) (at VGS = 4.5V) < 6mΩ.(100% UIS Tested,100%  Rg Tested).
      Absolute Maximum Ratings  TA=25°C unless otherwise noted of the AON7422 are Drain-Source Voltage(VDS)=30V, Gate-Source Voltage(VGS)=±20V, Continuous Drain Current(The maximum current rating is limited by bond-wires. )ID=32A(TC=25°C )/25A(TC=100°C), Pulsed Drain Current( Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C)IDM=150A, Continuous Drain Current(IDSM)=15(TA=25°C)/11(TA=70°C)A, Avalanche Current(Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C)IAR=47A, Repetitive avalanche energy L=0.1mH(EAR)=110mJ, Junction and Storage Temperature Range(TJ, TSTG)=-55 to 150°C.
      The thermal characteristics of AON7422 are RJA(Maximum Junction-to-Ambient(The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design.))=30(typ)(t  10s)/40(max)(Steady-State)°C/W, RJC(Maximum Junction-to-Case, Steady-State)=3(typ)/3.5(max)°C/W.