AON7700

MOSFET N-CH 30V 20A 8-DFN

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SeekIC No. : 003431176 Detail

AON7700: MOSFET N-CH 30V 20A 8-DFN

floor Price/Ceiling Price

Part Number:
AON7700
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Series: SRFET™ Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET N-Channel, Schottky, Metal Oxide Gain : 11.5 dB at 500 MHz
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 40A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 12A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) @ Vgs: 33nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 4250pF @ 15V
Power - Max: 33W Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead Exposed Pad Supplier Device Package: 8-DFN-EP (3x3)    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25° C: 40A
Power - Max: 33W
Packaging: Cut Tape (CT)
FET Type: MOSFET N-Channel, Schottky, Metal Oxide
Gate Charge (Qg) @ Vgs: 33nC @ 4.5V
Package / Case: 8-SMD, Flat Lead Exposed Pad
Manufacturer: Alpha & Omega Semiconductor Inc
Supplier Device Package: 8-DFN-EP (3x3)
Series: SRFET™
Input Capacitance (Ciss) @ Vds: 4250pF @ 15V
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 12A, 10V


Features:

`VDS (V) = 30V
`ID = 12A (VGS = 10V)
`RDS(ON) < 8.5m (VGS = 10V)
`RDS(ON) < 10m (VGS = 4.5V)





Specifications

Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain
Current B,H
TC=25
ID
20
A
TC=100
20
Pulsed Drain Current C
IDM
80
Continuous Drain
Current G
TA=25
IDSM
12
TA=70
11
Power Dissipation B TC=25
PD
33
W
TC=100
13
Power Dissipation A TA=25
PDSM
3.1
TA=70
2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150





Description

SRFETTM AON7700/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.

This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
- RoHS Compliant.
- Halogen Free






Parameters:

Technical/Catalog InformationAON7700
VendorAlpha & Omega Semiconductor Inc (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs8.5 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds 4250pF @ 15V
Power - Max33W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs33nC @ 4.5V
Package / Case8-DFN
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AON7700
AON7700
785 1138 1 ND
78511381ND
785-1138-1



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