AOP607

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Series: -
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power - Max: 2.5W
Gate Charge (Qg) @ Vgs: 10.5nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 4.7A, 3.4A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP
Manufacturer: Alpha & Omega Semiconductor Inc
Input Capacitance (Ciss) @ Vds: 540pF @ 30V
Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.7A, 10V


Features:

n-channel p-channel
V_DS (V) = 60V -60V
I_D = 4.7A (V_GS=10V) -3.4A (V_GS=-10V)
R _DS(ON) R _DS(ON)
< 56m (V_GS=10V) < 105m (V_GS =-10V)
< 77m (V_GS=4.5V) < 135m (V_GS =-4.5V)




Pinout






Specifications

Parameter		Symbol	Max n-channel	Max p-channel	Units
Drain-Source Voltage		VDS	60	-60	V
Gate-Source Voltage		VGS	±20	±20	V
Continuous Drain Current A	TA=25°C	ID	4.7	-3.5	A
	TA=100°C		3.8	-2.9
Pulsed Drain Current B		IDM	20	-20
Power Dissipation A	TA=25°C	PDSM	2.5	2.5	W
	TA=100°C		1.6	1.6
Junction and Storage Temperature Range		TJ,TSTG	-55 to 150	-55 to 150	°C

Description

The AOP607 uses advanced trench technology MOSFETs to provide excellent R _DS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP607 is Pbfree (meets ROHS & Sony 259 specifications). AOP607L is a Green Product ordering option. AOP607 and AOP607L are electrically identical.

Parameters:

Technical/Catalog Information	AOP607
Vendor	Alpha & Omega Semiconductor Inc
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	4.7A, 3.4A
Rds On (Max) @ Id, Vgs	56 mOhm @ 4.7A, 10V
Input Capacitance (Ciss) @ Vds	540pF @ 30V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	10.5nC @ 10V
Package / Case	8-DIP
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	AOP607 AOP607 785 1141 5 ND 78511415ND 785-1141-5