AOT10N65, US $ .32-.32, AOT10N65 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003430746 Detail

AOT10N65: MOSFET N-CH 650V 10A TO220

AOT10N65 Data Sheet

US $ .32~.32 / Piece | Get Latest Price

Part Number:: AOT10N65
Mfg:
Supply Ability:: 5000

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0~1000

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$.32

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Upload time: 2024/4/27

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Recent History
What is this?

AOT10N60 evaluate
US $.3 - .82 / Piece

MOSFET N-CH 600V 10A TO-220
AOT1100L evaluate
US $.79 - 1.79 / Piece

MOSFET N CH 100V 92A TO220
AOT11N70 evaluate
US $.38 - .38 / Piece

MOSFET N-CH 700V 11A TO220

Product Details

Quick Details

Series:	-	Manufacturer:	Alpha & Omega Semiconductor Inc
FET Type:	MOSFET N-Channel, Metal Oxide	Transistor Type:	-
Gain :	19.5 dB	Current - Collector (Ic) (Max):	-
FET Feature:	Standard	Drain to Source Voltage (Vdss):	650V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	10A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	1 Ohm @ 5A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	4.5V @ 250µA	Gate Charge (Qg) @ Vgs:	33nC @ 10V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	1645pF @ 25V
Power - Max:	250W	Mounting Type:	Through Hole
Package / Case:	TO-220-3	Supplier Device Package:	TO-220

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 10A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Power - Max: 250W
Drain to Source Voltage (Vdss): 650V
Supplier Device Package: TO-220
Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V
Input Capacitance (Ciss) @ Vds: 1645pF @ 25V
Manufacturer: Alpha & Omega Semiconductor Inc

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AOT10N65

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