AOT412

MOSFET N-CH 100V 60A TO-220

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SeekIC No. : 003431098 Detail

AOT412: MOSFET N-CH 100V 60A TO-220

floor Price/Ceiling Price

US $ .37~1.01 / Piece | Get Latest Price
Part Number:
AOT412
Mfg:
Supply Ability:
5000

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  • Qty
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  • 1~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
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  • 5000~10000
  • Unit Price
  • $1.01
  • $.81
  • $.71
  • $.62
  • $.55
  • $.43
  • $.4
  • $.38
  • $.37
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Series: SDMOS™ Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 60A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 15.8 mOhm @ 20A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) @ Vgs: 54nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 3220pF @ 50V
Power - Max: 150W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25° C: 60A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Gate Charge (Qg) @ Vgs: 54nC @ 10V
Supplier Device Package: TO-220-3
Power - Max: 150W
Manufacturer: Alpha & Omega Semiconductor Inc
Series: SDMOS™
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Rds On (Max) @ Id, Vgs: 15.8 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds: 3220pF @ 50V


Features:

VDS (V) =100V
ID= 60A (VGS = 10V)
RDS(ON) < 15.8m (VGS = 10V)
RDS(ON) <19.4m (VGS = 7V )
100% UIS Tested!
100% RgTested!






Specifications

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ± 25 V
Continuous Drain
Current
TC =25
ID 60 A
TC=100
44

Pulsed Drain CurrentC
IDM 140
Continuous Drain
Current
TA=25
IDSM 802 A
TA=70
6.6

Avalanche CurrentC
IAR 47 A

Repetitive avalanche energy L=0.1mHC
EAR 110 mJ
Power DissipationB T=25
PD 150 W
TC=100

75
Power DissipationA TA=25
PDSM 2.6 W
TA=70
1.7
Junction and Storage Temperature Range TJ,TSTG -55 to 175

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-AmbientA t10s RJA 15 18 /W
Maximum Junction-to-Ambient A D Steady-State 40 48 /W
Maximum Junction-to-Case Steady-State RJC 0.7 1 /W





Description

The AOT412 and AOT412L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON)with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited orPWM, load switching and general purpose applications.
-RoHS Compliant
-AOT412L is Halogen Free






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