AOT5N60

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 20nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 5A
Drain to Source Voltage (Vdss): 600V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) @ Vds: 700pF @ 25V
Supplier Device Package: TO-220-3
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2.5A, 10V
Power - Max: 132W


Features:

V_{DS (V)} = 700V @ 150°C
I_D = 5A
R_DS(ON) < 1.8 (V_GS = 10V)




Specifications

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		VDS	600	V
Gate-Source Voltage		VGS	±30	V
Continuous Drain Current B	TC=25°C	ID	5	A
	TC=100°C		3.2	A
Pulsed Drain Current C		IDM	16	A
Avalanche Current C		IAR	2.6	A
Repetitive avalanche energy C		EAR	100	mJ
Single pulsed avalanche energy G		EAS	200	mJ
Peak diode recovery dv/dt		dV/dt	5	V/ns
Power Dissipation B	TC=25°C	PD	132	W
	Derate above 25oC		1.05	W/°C
Junction and Storage Temperature Range		TJ, TSTG	-50 to 150	°C
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds		TL	300	°C

Description

The AOT5N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.