AOTF12N50

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 12A
Drain to Source Voltage (Vdss): 500V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power - Max: 50W
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Gate Charge (Qg) @ Vgs: 37nC @ 10V
Supplier Device Package: TO-220F
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 520 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds: 1633pF @ 25V


Features:

`V<sub>DS</sub> (V) =600V@150°C
`I_D = 12A
`R_DS(ON)< 0.52 (V_GS = 10V)




Specifications

Parameter	Symbol	AOT12N50	AOTF12N50	Unit
Drain-Source Voltage	VDS	500	500	V
Gate-Source Voltage	VGS	±30	±30	V
Continuous Drain Current TC=25 TC=100	ID	12 7.6	12 7.6	A
Pulsed Drain Current C	IDM	48	48	A
Avalanche Current C	IAR	5.5	5.5	A
Repetitive avalanche energy C	EAR	454	454	mJ
Single pulsed avalanche energy G	EAS	908	908	mJ
Peak diode recovery dv/dt	dv/dt	5	5	V/ns
Power Dissipation B TC=25 Derate above 25oC	PD	208 1.7	50 0.4	W/
Operating Junction and Storage Temperature Range	TJ,TSTG	-50 to 150	-50 to 150
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds	TL	300	300

*1 Surface Mounted on FR4 Board , t 10sec .
*2 Pulse width limited by maximum junction temperature.




Description

The AOT12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.