MOSFET N-CH 500V 14A TO220F
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Series: | - | Manufacturer: | Alpha & Omega Semiconductor Inc | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Standard | Drain to Source Voltage (Vdss): | 500V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 14A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 7A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 4.5V @ 250µA | Gate Charge (Qg) @ Vgs: | 51nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 2297pF @ 25V | ||
Power - Max: | 50W | Mounting Type: | Through Hole | ||
Package / Case: | TO-220-3 Full Pack | Supplier Device Package: | TO-220F |
Parameter | Symbol | AOT14N50 | AOTF14N50 | Unit |
Drain-Source Voltage | VDS | 500 | 500 | V |
Gate-Source Voltage | VGS | ±30 | ±30 | V |
Continuous Drain Current TC=25 TC=100 |
ID | 14 9.6 |
14 9.6 |
A |
Pulsed Drain Current C | IDM | 56 | 56 | A |
Avalanche Current C | IAR | 6 | 6 | A |
Repetitive avalanche energy L=0.1mH C | EAR | 540 | 540 | mJ |
Single pulsed avalanche energy G | EAS | 1080 | 1080 | mJ |
Peak diode recovery dv/dt | dv/dt | 5 | 5 | V/ns |
Power Dissipation B TC=25 TC=100 |
PD | 223 1.8 |
50 0.4 |
W/ |
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds |
TL | 300 | 300 | |
Operating Junction and Storage Temperature Range | TJ,TSTG | - 55 to 175 | - 55 to 175 |
The AOT14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.