AOTF404

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 4V @ 250µA
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Current - Continuous Drain (Id) @ 25° C: 5.8A
Power - Max: 2.2W
Gate Charge (Qg) @ Vgs: 46nC @ 10V
Drain to Source Voltage (Vdss): 105V
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 28 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds: 2445pF @ 25V
Supplier Device Package: TO-220FL


Features:

`V<sub>DS</sub> (V) = 105V
`I_D = 26 A (VGS =10V)
`R<sub>DS(ON)</sub> < 28 m (VGS =10V)
`R_DS(ON) < 31 m (VGS = 6V)




Specifications

Parameter	Symbol	Rating	Unit
Drain-Source Voltage	VDS	105	V
Gate-Source Voltage	VGS	±25	V
Continuous Drain Current TC=25°C TC=100°C	ID	26 18	A
Pulsed Drain Current C	IDM	90	A
Continuous Drain Current TA=25°C TA=70°C	IDSM	5.8 4.5	A
Avalanche Current C	IAR	37	A
Repetitive avalanche energy L=0.1mH C	EAR	68	mJ
Power Dissipation B TC=25°C TC=100°C	PD	43 21	W
Power Dissipation A TA=25°C TA=70°C	PDSM	2.2 1.38	W
Operating Junction and Storage Temperature Range	TJ,TSTG	- 55 to 175

*1 Surface Mounted on FR4 Board , t 10sec .
*2 Pulse width limited by maximum junction temperature.




Description

The AOTF404/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications.