AOTF409

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25° C: 5.4A
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 52nC @ 10V
Package / Case: TO-220-3 Full Pack
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 40 mOhm @ 20A, 10V
Supplier Device Package: TO-220FL
Input Capacitance (Ciss) @ Vds: 2953pF @ 30V
Power - Max: 2.16W


Features:

V_DS (V) =-60V
I_D = -24A (V_GS = -10V)
R_DS(ON) < 40m (V_GS = -10V)
R_DS(ON) < 54m (V_GS = -4.5V)





Specifications

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		VDS	-60	V
Gate-Source Voltage		VGS	±20	V
Continuous Drain Current B,J	TC=25	ID	-24	A
	TC=100		-17
Pulsed Drain Current C		IDM	-60
Continuous Drain Current H	TA=25	IDSM	-5.4
	TA=70		-4.3
Avalanche Current C		IAR	-37
Repetitive avalanche energy L=0.1mH C		EAR	68	mJ
Power Dissipation B	TC=25	PD	43	W
	TC=100		21
Power Dissipation A	TA=25	PDSM	2.16
	TA=70		1.38
Junction and Storage Temperature Range		TJ, TSTG	-55 to 175

Description

The AOTF409/L uses advanced trench technology to provide excellent R_DS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the TO220FL package, this device is well suited for high current load applications.AOTF409 and AOTF409L are electrically identical.