AOTF7N60

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 28nC @ 10V
Drain to Source Voltage (Vdss): 600V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 7A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Power - Max: 38.5W
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds: 1035pF @ 25V


Features:

V_DS (V) = 700V @ 150
I_D = 7A
R_DS(ON) < 1.2 (V_GS = 10V)

Specifications

Parameter		Symbol	Maximum		Units
Drain-Source Voltage		VDS	600		V
Gate-Source Voltage		VGS	±30		V
Continuous Drain Current B,H	TC=25	ID	7	7*	A
	TC=100		4.4	4.4*
Pulsed Drain Current C		IDM	28
Avalanche Current C, G		IAR	3
Repetitive avalanche energy C, G		EAR	135		mJ
Single pulsed avalanche energy G		EAS	270		mJ
Peak diode recovery dv/dt		dv/dt	5		V/ns
Power Dissipation B	TC=25	PD	176	38.5	W
	Derate above 25		1.4	0.3	W/
Junction and Storage Temperature Range		TJ, TSTG	-50 to 150
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds		TL	300

Description

The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low R_DS(on), C_iss and C_rss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.