AOTF8N60

MOSFET N-CH 600V 8A TO220F

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SeekIC No. : 003434020 Detail

AOTF8N60: MOSFET N-CH 600V 8A TO220F

floor Price/Ceiling Price

US $ .27~.27 / Piece | Get Latest Price
Part Number:
AOTF8N60
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1000
  • Unit Price
  • $.27
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 600V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 8A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 900 mOhm @ 4A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) @ Vgs: 35nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1370pF @ 25V
Power - Max: 50W Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 8A
Drain to Source Voltage (Vdss): 600V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) @ Vgs: 35nC @ 10V
Power - Max: 50W
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Input Capacitance (Ciss) @ Vds: 1370pF @ 25V
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 900 mOhm @ 4A, 10V


Features:

`VDS (V) = 700V @ 150°C
`ID = 8A
`RDS(ON) < 0.9 (VGS = 10V)





Specifications

Parameter Symbol AOT10N60 AOTF10N60 Unit
Drain-Source Voltage VDS 600 600 V
Gate-Source Voltage VGS ±30 ±30 V
Avalanche Current C IAR 3.2 3.2 A
Continuous Drain
Current B
TC=25
TC=100
ID 8
5
8
5
A
Pulsed Drain Current C IDM 32 32 A
Single pulsed avalanche energy G EAS 150 150 mJ
Repetitive avalanche energy C EAR 300 300 mJ
Peak diode recovery dv/dt dv/dt 5 5 V/ns
Power Dissipation B
TC=25
Derate above 25
PD 147
1.17

50
0.4

W/
Junction and Storage Temperature Range TJ,Tstg -55 to +150 -55 to +150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL 300 300
* Drain current limited by maximum junction temperature.




Description

The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.






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