Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 8nC @ 10V
Drain to Source Voltage (Vdss): 600V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 1.3A
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Power - Max: 45W
Input Capacitance (Ciss) @ Vds: 160pF @ 25V
Supplier Device Package: TO-251
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 9 Ohm @ 650mA, 10V
Features: VDS (V) = 600V
ID = 1.3A
RDS(ON) < 9 (VGS = 10V)
100% UIS Tested!
100% R g Tested!
Ciss , C oss , C rss Tested!Specifications
| Parameter |
Symbol |
Maximium |
Unit |
| Drain to Source voltage |
VDS |
600 |
V |
| Gate to Source voltage |
VGS |
±30 |
V |
Continuous Drain
Current B |
TC=25 |
ID |
1.3 |
A |
| TC=100 |
0.8 |
| Pulsed Drain Current C |
IDM |
4.0 |
| Avalanche Current C |
IAR |
1.0 |
A |
| Repetitive avalanche energy C |
EAR |
15 |
mJ |
| Single pulsed avalanche energy G |
EAS |
30 |
mJ |
| Peak diode recovery dv/dt |
dv/dt |
5 |
V/ns |
| Power Dissipation B |
TC=25 |
PD |
45 |
W |
| Derate above 25 |
0.36 |
W/ |
| Junction and Storage Temperature Range |
TJ, TSTG |
-50 to 150 |
|
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds |
TL |
300 |
|
DescriptionThe AOU1N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
AOU1N60 Data Sheet
