Purchase AOU1N60, In-stock AOU1N60 From SeekIC.


Part Number: AOU1N60
Description: The AOD1N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deli...


Description: The AOD1N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deli...
The AOD1N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
| Parameter |
Symbol |
Maximium |
Unit | |
| Drain to Source voltage |
VDS |
600 |
V | |
| Gate to Source voltage |
VGS |
±30 |
V | |
| Continuous Drain Current B |
TC=25 |
ID |
1.3 |
A |
| TC=100 |
0.8 | |||
| Pulsed Drain Current C |
IDM |
4.0 | ||
| Avalanche Current C |
IAR |
1.0 |
A | |
| Repetitive avalanche energy C |
EAR |
15 |
mJ | |
| Single pulsed avalanche energy G |
EAS |
30 |
mJ | |
| Peak diode recovery dv/dt |
dv/dt |
5 |
V/ns | |
| Power Dissipation B | TC=25 |
PD |
45 |
W |
| Derate above 25 |
0.36 |
W/ | ||
| Junction and Storage Temperature Range |
TJ, TSTG |
-50 to 150 |
||
| Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds |
TL |
300 |
||
AOU400
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