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Part Number: AOU1N60

 

 

 

 

Description: The AOD1N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deli...


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AOU1N60 General Description


The AOD1N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

AOU1N60 Maximum Ratings

Parameter
Symbol
Maximium
Unit
Drain to Source voltage
VDS
600
V
Gate to Source voltage
VGS
±30
V
Continuous Drain
Current B
TC=25
ID
1.3
A
TC=100
0.8
Pulsed Drain Current C
IDM
4.0
Avalanche Current C
IAR
1.0
A
Repetitive avalanche energy C
EAR
15
mJ
Single pulsed avalanche energy G
EAS
30
mJ
Peak diode recovery dv/dt
dv/dt
5
V/ns
Power Dissipation B TC=25
PD
45
W
Derate above 25
0.36
W/
Junction and Storage Temperature Range
TJ, TSTG
-50 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
300

AOU1N60 Features

VDS (V) = 600V
ID = 1.3A
RDS(ON) < 9 (VGS = 10V)
100% UIS Tested!
100% R g Tested!
Ciss , C oss , C rss Tested!

AOU1N60 datasheet

AOU400
PDF/DataSheet Download

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