Features: ·VDS (V) = -40V·ID = -12A (VGS = -10V)·RDS(ON) < 45mΩ (VGS = -10V)·RDS(ON) < 69mΩ (VGS = -4.5V)PinoutSpecifications Parameter Symbol Maximum Units Drain-Source VoltageGate-Source Voltage VDSVGS -40 ±20 VV Continuous DrainCurrent G TA=25°C...
AOU413: Features: ·VDS (V) = -40V·ID = -12A (VGS = -10V)·RDS(ON) < 45mΩ (VGS = -10V)·RDS(ON) < 69mΩ (VGS = -4.5V)PinoutSpecifications Parameter Symbol Maximum Units Drai...
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Parameter |
Symbol |
Maximum |
Units | |
Drain-Source Voltage Gate-Source Voltage |
VDS VGS |
-40 ±20 |
V V | |
Continuous Drain Current G |
TA=25°C TA=100°C |
ID |
-12 -12 |
A |
Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.3mH C |
IDM IAR EAR |
-30 30 -12 |
mJ | |
Power Dissipation B | TC=25°C TC=100°C |
PD |
50 25 |
W |
Junction and Storage Temperature Range |
TJ, TSTG |
-55 to 175 |
°C |
The AOU413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOU413 is Pb-free (meets ROHS & Sony 259 specifications). AOU413L is a Green Product ordering option. AOU413 and AOU413L are electrically identical.