AP4578GM

Features:

Simple Drive Requirement
Lower Gate Charge
Fast Switching Performance
RoHS Compliant


Specifications

Symbol	Parameter	Rating		Units
		N-channel	P-channel
VDS	Drain-Source Voltage	60	-60	V
VGS	Gate-Source Voltage	±20	±20	V
ID@TA=25	Continuous Drain Current3	4.5	-3	A
ID@TA=70	Continuous Drain Current3	3.6	-2.4	A
IDM	Pulsed Drain Current1	20	-20	A
PD@TA=25	Total Power Dissipation	2.0		W
	Linear Derating Factor	0.016		W/
TSTG	Storage Temperature Range	-55 to 150
TJ	Operating Junction Temperature Range	-55 to 150

Description

The Advanced Power MOSFETs AP4578GM from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.

The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.