AP4936M

Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage ± 20 V ID@TA=25 Continuous Drain Current3 5.8 A ID@TA=70 Continuous Drain Current3 4.6 A IDM Pulsed Drain Current1 30 A PD@TA=25 Total Power Dissipation 2 ...

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SeekIC No. : 004286333 Detail

AP4936M: Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage ± 20 V ID@TA=25 Continuous Drain Current3 5.8 A ID@TA=70 Continuous D...

floor Price/Ceiling Price

Part Number:
AP4936M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Specifications

Symbol Parameter Rating Units
VDS Drain-Source Voltage 25 V
VGS Gate-Source Voltage ± 20 V
ID@TA=25 Continuous Drain Current3 5.8 A
ID@TA=70 Continuous Drain Current3 4.6 A
IDM Pulsed Drain Current1 30 A
PD@TA=25 Total Power Dissipation 2 W
  Linear Derating Factor 0.016 W/
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150



Description

The Advanced Power MOSFETs AP4936M from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.


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