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Part Number: AP603

 

 

 

 

Description: The AP603 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT pa...


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AP603 General Description


The AP603 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has excellent backoff linearity, while being able to achieve high performance for 800-2200 MHz applications with up to +38.5 dBm of compressed 1dB power.

The AP603 uses a high reliability, high voltage InGaP/GaAs HBT process technology. The device incorporates proprietary bias circuitry to compensate for variations in linearity and current draw over temperature. The module does not require any negative bias voltage; an internal active bias allows the AP603 to operate directly off a commonly used high voltage supply (typically +24 to +32V). An added feature allows the quiescent bias to be adjusted externally to meet specific system requirements.

The AP603 is targeted for use as a pre-driver and driver stage amplifier in wireless infrastructure where high linearity and high efficiency is required. This combination makes the device an excellent candidate for next generation multi-carrier 3G mobile infrastructure.

AP603 Maximum Ratings

Storage Temperature, Tstg...... -55 to +125 ºC
Junction Temperature, TJ
For 106 hours MTTF ..............192 ºC
RF Input Power (CW tone), Pin ......Input P6dB
Breakdown Voltage C-B, BVCBO ....80 V @ 0.1 mA
Breakdown Voltage C-E, BVCEO ....51 V @ 0.1 mA
Quiescent Bias Current, ICQ ..........320 mA
Power Dissipation, PDISS ............9.5 W

AP603 Features

• 800 2200 MHz
• +38.5 dBm P1dB
• -50 dBc ACLR @ 1W PAVG
• -51 dBc IMD3 @ 1W PEP
• 15% Efficiency @ 1W PAVG
• Internal Active Bias
• Internal Temp Compensation
• Capable of handling 7:1 VSWR @ 28 Vcc, 2.14 GHz, 5.5W CW Pout
• Lead-free/RoHS-compliant 5x6 mm power DFN package

AP603 Typical Application

• Mobile Infrastructure
• High Power Amplifier (HPA)

AP603 datasheet

AP603-PCB1960
PDF/DataSheet Download

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