AP603

Features: • 800 2200 MHz• +38.5 dBm P1dB• -50 dBc ACLR @ 1W PAVG• -51 dBc IMD3 @ 1W PEP• 15% Efficiency @ 1W PAVG• Internal Active Bias• Internal Temp Compensation• Capable of handling 7:1 VSWR @ 28 Vcc, 2.14 GHz, 5.5W CW Pout• Lead-free/RoHS-...

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SeekIC No. : 004286347 Detail

AP603: Features: • 800 2200 MHz• +38.5 dBm P1dB• -50 dBc ACLR @ 1W PAVG• -51 dBc IMD3 @ 1W PEP• 15% Efficiency @ 1W PAVG• Internal Active Bias• Internal Temp Comp...

floor Price/Ceiling Price

Part Number:
AP603
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

• 800 2200 MHz
• +38.5 dBm P1dB
• -50 dBc ACLR @ 1W PAVG
• -51 dBc IMD3 @ 1W PEP
• 15% Efficiency @ 1W PAVG
• Internal Active Bias
• Internal Temp Compensation
• Capable of handling 7:1 VSWR @ 28 Vcc, 2.14 GHz, 5.5W CW Pout
• Lead-free/RoHS-compliant 5x6 mm power DFN package



Application

• Mobile Infrastructure
• High Power Amplifier (HPA)



Specifications

Storage Temperature, Tstg...... -55 to +125 ºC
Junction Temperature, TJ
For 106 hours MTTF ..............192 ºC
RF Input Power (CW tone), Pin ......Input P6dB
Breakdown Voltage C-B, BVCBO ....80 V @ 0.1 mA
Breakdown Voltage C-E, BVCEO ....51 V @ 0.1 mA
Quiescent Bias Current, ICQ ..........320 mA
Power Dissipation, PDISS ............9.5 W



Description

The AP603 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has excellent backoff linearity, while being able to achieve high performance for 800-2200 MHz applications with up to +38.5 dBm of compressed 1dB power.

The AP603 uses a high reliability, high voltage InGaP/GaAs HBT process technology. The device incorporates proprietary bias circuitry to compensate for variations in linearity and current draw over temperature. The module does not require any negative bias voltage; an internal active bias allows the AP603 to operate directly off a commonly used high voltage supply (typically +24 to +32V). An added feature allows the quiescent bias to be adjusted externally to meet specific system requirements.

The AP603 is targeted for use as a pre-driver and driver stage amplifier in wireless infrastructure where high linearity and high efficiency is required. This combination makes the device an excellent candidate for next generation multi-carrier 3G mobile infrastructure.




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