AP640R1

Features:

Broad Bandwidth
Low Loss, < 1.3 dB
High Isolation, > 37 dB
Excellent Return Loss, < -13 dB
Fast Switching Speed, 4 ns
 High Power Handling, 37 dBm Peak, 33 dBm CW


Specifications

Characteristic	Value
Operating Temperature	-55°C to +125°C
Storage Temperature	-65°C to +150°C
DC Reverse Bias	-70 V (-20 mA)
DC Forward Bias	+1.3 V (100 mA)
PIN	10 W

Description

Alpha's high isolation, single pole, single throw PIN diode switch is a robust, high performance switch. It is ideal for low loss, high isolation applications, particularly where broad bandwidths and high power handling is required. AP640R1 uses Alpha's proven PIN diode technology, and is based upon MBE layers for the highest uniformity and repeatability. The diodes employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate an epoxy die attach process. The GaAs MMIC AP640R1 employs two shunt PIN diodes and an on-chip bias network. Chips are measured on a 100% basis at 24, 28, 31 and 35 GHz for insertion loss, isolation, input and output return losses, and also at DC for diode breakdown voltage and turn on voltage.