AP9435GM

The AP9435GM is designed as one kind of P-channel enhancement mode power MOSFETs which would be the RoHS-conpliant product. This advanced power MOSFET from APEC provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

It has three features. (1)Simple drive requirement. (2)Low gate charge. (3)Fast switching. Those are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1)Its drain to source voltage would be -30V. (2)Its gate to source voltage would be +/-20V. (3)Its continuous drain current would be -5.3a at Ta=25°C and would be -4.7A at Ta=70°C. (4)Its pulsed drain current would be -20A. (5)Its total power dissipation would be 2.5W at Ta=25°C. (6)Its linear derating factor would be 0.02W/°C. (7)Its storage temperature range would be from -55°C to 150°C. (8)Its operating junction temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics are concluded as follow. (1)Its drain to source breakdown voltage would be min -30V. (2)Its static drain to source on-resistance would be max 50mohms at Vgs=-10V and Id=-5A and it would be max 90mohms at Vgs=-4.5V and Id=-4A. (3)Its gate threshold voltage would be min -1V and max -3V. (4)Its forward transconductance would be typ 5S. (5)Its gate source leakage would be max +/-100nA. (6)Its total gate charge would be typ 14.6nC. (7)Its gate to source charge would be typ 1.8nC. (8)Its gate to drain charge would be typ 3.7nC. (9)Its turn-on delay time would be typ 6.6ns. (10)Its rise time would be typ 7.7ns. (11)Its turn-off delay time would be typ 22ns. (12)Its fall time would be typ 9.3ns. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!