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AP9575M

Features: Lower On-resistance Simple Drive Requirement Fast Switching CharacteristicSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±25 V ID@TA=25 Continuous Drain Current3 -4.0 A ID@TA=70 Continuous Drain Current...

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SeekIC No. : 004286416 Detail

AP9575M: Features: Lower On-resistance Simple Drive Requirement Fast Switching CharacteristicSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source V...

AP9575M Data Sheet

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Part Number:
AP9575M
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Lower On-resistance
Simple Drive Requirement
Fast Switching Characteristic


Specifications

Symbol Parameter Rating Units
VDS Drain-Source Voltage -60 V
VGS Gate-Source Voltage ±25 V
ID@TA=25 Continuous Drain Current3 -4.0 A
ID@TA=70 Continuous Drain Current3 -3.2 A
IDM Pulsed Drain Current1 -20 A
PD@TA=25 Total Power Dissipation 2.5 W
  Linear Derating Factor 0.02 W/
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150



Description

The Advanced Power MOSFETs AP9575M from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.




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