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AP95T07GP

Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage 75 V VGS Gate-Source Voltage ±20 V ID@TC=25 Continuous Drain Current, VGS @ 10V3 80 A ID@TC=100 Continuous Drain Current, VGS @ 10V 70 A IDM Pulsed Drain Current1 320 A PD@TC=25 Total Po...

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SeekIC No. : 004286417 Detail

AP95T07GP: Specifications Symbol Parameter Rating Units VDS Drain-Source Voltage 75 V VGS Gate-Source Voltage ±20 V ID@TC=25 Continuous Drain Current, VGS @ 10V3 80 A ID@TC=100 Co...

AP95T07GP Data Sheet

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Part Number:
AP95T07GP
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Symbol Parameter Rating Units
VDS Drain-Source Voltage 75 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V3 80 A
ID@TC=100 Continuous Drain Current, VGS @ 10V 70 A
IDM Pulsed Drain Current1 320 A
PD@TC=25 Total Power Dissipation 300 W
  Linear Derating Factor 2 W/
EAS Single Pulse Avalanche Energy4 450 mJ
TSTG Storage Temperature Range -55 to 175
TJ Operating Junction Temperature Range -55 to 175



Description

Advanced Power MOSFETs AP95T07GP from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as DC/DC converters.




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