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APL502B2G

MOSFET N-CH 500V 58A T-MAX

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SeekIC No. : 003431714 Detail

APL502B2G: MOSFET N-CH 500V 58A T-MAX

APL502B2G Data Sheet

floor Price/Ceiling Price

US $ 16.89~26.03 / Piece | Get Latest Price
Part Number:
APL502B2G
Mfg:
Supply Ability:
5000

Price Break

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  • 1~10
  • 10~100
  • 100~250
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  • 2500~5000
  • Unit Price
  • $26.03
  • $24.27
  • $21.11
  • $19.7
  • $18.72
  • $17.94
  • $17.45
  • $16.89
  • Processing time
  • 15 Days
  • 15 Days
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Product Details

Quick Details

Series: - Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 500V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 58A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 90 mOhm @ 29A, 12V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) @ Vgs: -
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 9000pF @ 25V
Power - Max: 730W Mounting Type: Through Hole
Package / Case: TO-247-3 Variant Supplier Device Package: T-MAX? [B2]    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: -
Drain to Source Voltage (Vdss): 500V
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 58A
Manufacturer: Microsemi Power Products Group
Input Capacitance (Ciss) @ Vds: 9000pF @ 25V
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX? [B2]
Rds On (Max) @ Id, Vgs: 90 mOhm @ 29A, 12V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Power - Max: 730W


Parameters:

Technical/Catalog InformationAPL502B2G
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C58A
Rds On (Max) @ Id, Vgs90 mOhm @ 29A, 12V
Input Capacitance (Ciss) @ Vds 9000pF @ 25V
Power - Max730W
PackagingTube
Gate Charge (Qg) @ Vgs-
Package / CaseT-MAX
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APL502B2G
APL502B2G
APL502B2GMI ND
APL502B2GMIND
APL502B2GMI



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