APM4435KC-TRL

The APM4435KC-TRL is designed as one kind of P-chahnel enhancement mode MOSFETs. Typical application is power management in notebook computer, portable equipment and battery powered systems.

APM4435KC-TRL has five features. (1)-30V/-8A, Rds(on)=16mohms (typ) at Vgs=-10V and would be 24mohms typ at Vgs=-4.5V. (2)Super high dense cell design. (3)Reliable and rugged. (4)SOP-8 package. (5)Lead free available (RoHS compliant). Those are all the main features.

Some absolute maximum ratings APM4435KC-TRL have been concluded into several points as follow. (1)Its drain to source voltage would be -30V. (2)Its gate to source voltage would be +/-25V. (3)Its continuous drain current would be -8A. (4)Its pulsed drain current would be -30A. (5)Its diode continuous forward current would be -3A. (6)Its maximum junction temperature would be 150°C. (7)Its storage temperature range would be from -55°C to 150°C. (8)Its maximum power dissipation would be 2W at Ta=25°C and would be 0.8W at Ta=100°C. (9)Its thermal resistance to junction to ambient would be 62.5°C/W. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics APM4435KC-TRL are concluded as follow. (1)Its drain to source breakdown voltage would be min -30V. (2)Its zero gate voltage drain current owuld be max -1uA and would be max -30uA at Ta=25°C. (3)Its gate threshold voltage would be min -1V and typ -1.5V and max -2V. (4)Its gate leakage current would be max +/-100nA. (5)Its diode forward voltage would be typ -0.8V and max -1.3V. (6)Its drain to source on-state resistance would be typ 16mohms and max 20mohms at Vgs=-10V and Ids=-8A and would be typ 24mohms and max 30mohms at Vgs=-4.5V and Ids=-5A. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!