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APM7312K

Features: • 20V/6A,R DS(ON) =35m(typ.) @ VGS = 10VR DS(ON) =45m(typ.) @ VGS = 4.5VR DS(ON) =110m(typ.) @ VGS = 2.5V• Super High Dense Cell Design• Reliable and Rugged• Lead Free Available (RoHS Compliant)Application• Power Management in Notebook Computer, Portable Equ...

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SeekIC No. : 004286927 Detail

APM7312K: Features: • 20V/6A,R DS(ON) =35m(typ.) @ VGS = 10VR DS(ON) =45m(typ.) @ VGS = 4.5VR DS(ON) =110m(typ.) @ VGS = 2.5V• Super High Dense Cell Design• Reliable and Rugged• Lead F...

APM7312K Data Sheet

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Part Number:
APM7312K
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• 20V/6A,
R DS(ON) =35m(typ.) @ VGS = 10V
R DS(ON) =45m(typ.) @ VGS = 4.5V
R DS(ON) =110m(typ.) @ VGS = 2.5V
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free Available (RoHS Compliant)




Application

• Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems




Specifications

Symbol
Parameter
Rating
Unit
VDSS
 Drain-Source Voltage
20
V
VGSS
 Gate-Source Voltage
±16
ID*
 Continuous Drain Current VGS=10V
6
A
IDM*
 300s Pulsed Drain Current
24
IS*
 Diode Continuous Forward Current
1.7
TJ
 Maximum Junction Temperature
150
°C
TSTG
 Storage Temperature Range
-55 to 150
PD*
 Maximum Power Dissipation TA=25°C
2
W
TA=100°C
0.8
RJA*
 Thermal Resistance-Junction to Ambient
62.5
°C/W
Note: *Surface Mounted on 1in2 pad area, t 10sec.




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