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MFG:Microsemi-PPG  Category:Discrete Semiconductor Products  

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Part Number: APT1001R6BFLLG

Category: Discrete Semiconductor Products

MFG: Microsemi-PPG

 

 

Descriptions: MOSFET N-CH 1000V 8A TO-247

Price Break

30

Unit Price

11.78400

Extended Price

353.52

(All prices are in USD) Prices for reference only
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APT1001R6BFLLG General Description

MOSFET N-CH 1000V 8A TO-247

APT1001R6BFLLG Parameters

Technical/Catalog InformationAPT1001R6BFLLG
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C8A
Rds On (Max) @ Id, Vgs1.6 Ohm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 1320pF @ 25V
Power - Max266W
PackagingTube
Gate Charge (Qg) @ Vgs55nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT1001R6BFLLG
APT1001R6BFLLG

APT1001R6BFLLG datasheet

APT1001
PDF/DataSheet Download

Find APT1001R6BFLLG Suppliers

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  • TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3  
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  • ·APT1001R1AVR
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  • ·APT1001R1BN
  • ADPOW [Advanced Power Technology] 
  • N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 
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  • ·APT1001R1BVFR
  • ADPOW [Advanced Power Technology] 
  • Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 
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  • ·APT1001R1DN
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  • TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP  
  • 395046 KB
  • APT1001R1DN Datasheet Download
  • ·APT1001R1HN
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  • TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO  
  • 227320 KB
  • APT1001R1HN Datasheet Download
  • ·APT1001R1HVR
  • ADPOW [Advanced Power Technology] 
  • Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 
  • 68546 KB
  • APT1001R1HVR Datasheet Download
  • ·APT1001R1SN
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  • TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB  
  • 247344 KB
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