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MFG:APT D/C:`06+(pb-free)
- Table of contents:
APT1001R6BN
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DataSheet
General Description
APT1001R6BN Maximum Ratings
| Symbol | Parameter | APT1001R6BN | UNIT |
| VDSS | Drain-Source Voltage | 1000 | Volts |
| ID | Continuous Drain Current @ TC = 25°C |
8 | Amps |
| IDM | Pulsed Drain Current | 32 | |
| VGS | Gate-Source Voltage | ±30 |
Volts |
| PD | Total Power Dissipation @ TC = 25°C | 240 | Watts |
| Linear Derating Factor | 1.96 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55 to150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 |
APT1001R6BN
PDF/DataSheet Download
- Datasheet: APT1001R6BN
- File Size: 51529 KB
- Manufacturer: ADPOW [Advanced Power Technology]
- Click here to Download
- ·APT1001
- ADPOW [Advanced Power Technology]
- Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
- 36626 KB
- ·APT1001R1AN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
- 214276 KB
- ·APT1001R1AVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
- 69982 KB
- ·APT1001R1BN
- ADPOW [Advanced Power Technology]
- N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
- 53353 KB
- ·APT1001R1BVFR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 72323 KB
- ·APT1001R1DN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
- 395046 KB
- ·APT1001R1HN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
- 227320 KB
- ·APT1001R1HVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 68546 KB
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