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MFG:APT D/C:`06+(pb-free)
- Table of contents:
APT1001RBLC
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Suppliers
DataSheet
General Description
APT1001RBLC Maximum Ratings
| Symbol | Parameter | APT30M19JVR | UNIT |
| VDSS | Drain-Source Voltage | 1000 | Volts |
| ID | Continuous Drain Current @ Tc = 25 °C |
11 | Amps |
| IDM | Pulsed Drain Current |
44 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25 | 280 | Watts |
| Linear Derati | 2.24 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) |
26 | Amps |
| EAR | Repetitive Avalanche Energy | 30 | mJ |
| EAS | Single Pulse Avalanche Energy | 1210 |
APT1001RBLC Features
Identical Specifications: TO-247 or Surface Mount D3 PAK Package
Lower Gate Charge & Capacitance
Easier To Drive
100% Avalanche Tested
Faster switching
APT1001RBLC
PDF/DataSheet Download
- Datasheet: APT1001RBLC
- File Size: 36626 KB
- Manufacturer: ADPOW [Advanced Power Technology]
- Click here to Download
- ·APT1001
- ADPOW [Advanced Power Technology]
- Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
- 36626 KB
- ·APT1001R1AN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
- 214276 KB
- ·APT1001R1AVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
- 69982 KB
- ·APT1001R1BN
- ADPOW [Advanced Power Technology]
- N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
- 53353 KB
- ·APT1001R1BVFR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 72323 KB
- ·APT1001R1DN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
- 395046 KB
- ·APT1001R1HN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
- 227320 KB
- ·APT1001R1HVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 68546 KB
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APT1001R1SN
APT1001R1SN is a kind of N-channel enhancement mode high voltage power MOSFET. What comes next is about the maximum ratings APT1001R1SN at TC=25.The VDSS (drain-source voltage) is 1000 V.The ID (continuous drain current @ TC=25) is 10.5 A.The IDM (pulsed dr...
APT1001R1HVR
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