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MFG:APT Package Cooled:03+ D/C:247
- Table of contents:
APT1001RBN
-
Suppliers
DataSheet
General Description
APT1001RBN Maximum Ratings
Symbol
Parameter
APT1001RBN
UNIT
VDSS
Drain-Source Voltage
1000
Volts
ID
Continuous Drain Current @ TC = 25°C
11
Amps
IDM
Pulsed Drain Current
44
VGS
Gate-Source Voltage
±30
Volts
PD
Total Power Dissipation @ TC = 25°C
310
Watts
Linear Derating Factor
2.48
W/°C
TJ,TSTG
Operating and Storage Junction Temperature Range
-55 to150
°C
TL
Lead Temperature: 0.063" from Case for 10 Sec.
300
APT1001RBN
PDF/DataSheet Download
- Datasheet: APT1001RBN
- File Size: 52013 KB
- Manufacturer: ADPOW [Advanced Power Technology]
- Click here to Download
- ·APT1001
- ADPOW [Advanced Power Technology]
- Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
- 36626 KB
- ·APT1001R1AN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
- 214276 KB
- ·APT1001R1AVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
- 69982 KB
- ·APT1001R1BN
- ADPOW [Advanced Power Technology]
- N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
- 53353 KB
- ·APT1001R1BVFR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 72323 KB
- ·APT1001R1DN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
- 395046 KB
- ·APT1001R1HN
- TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
- 227320 KB
- ·APT1001R1HVR
- ADPOW [Advanced Power Technology]
- Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
- 68546 KB
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APT1001R1SN
APT1001R1SN is a kind of N-channel enhancement mode high voltage power MOSFET. What comes next is about the maximum ratings APT1001R1SN at TC=25.The VDSS (drain-source voltage) is 1000 V.The ID (continuous drain current @ TC=25) is 10.5 A.The IDM (pulsed dr...
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